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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA92 CMBTA93
SILICON EPITAXIAL TRANSISTORS
P-N-P transistor
Marking CMBTA92 = 2D CMBTA93 = 2E
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 C D.C. current gain -IC = 10 mA; -VCE = 10 V Transition frequency at f = 100 MHz -IC = 10 mA; -VCE = 20 V Collector-base capacitance at f = 1 MHz IE = 0; -VCB = 20 V -V CBO -V CEO -V EBO -IC Ptot hFE fT C cb CMBT A92 max. 300 max. 300 max. max. A93 200 V 200 V V mA mW
5 500 250 40 50
min. min. max. 6
MHz
8
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBTA92 CMBTA93
RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j-t + Rth t-s + Rth s-a) + Tamb Thermal resistance from junction to ambient -V CBO -V CEO -VEBO -IC Ptot Tstg Tj CMBT A92 max. 300 max. 300 max. max. max -55 max. A93 200 V 200 V 5 V 500 mA 250 mW to +150 C 150 C
Rth j-a
500
K/W
CHARACTERISTICS (at TA = 25C unless otherwise specified) Collector-emitter breakdown voltage -V(BR)CEO min. -IC = 1 mA; IB = 0 Collector-base breakdown voltage -V(BR)CBO min. -IC = 100 A; IE = 0 Collector cut-off current -I CBO max. -VCB = 200 V; IE = 0 -I CBO max. -VCB = 160 V; IE = 0 Emitter-base breakdown voltage -V(BR)EBO min. -IE = 100 A; IC = 0 Emitter cut-off current -I EBO max. IC = 0; -VBE = 3 V; Collector-base capacitance at f= 1 MHz Ccb max. IE = 0; -VCB = 20 V Saturation voltages -VCEsat max. -IC = 20 mA; -IB = 2 mA -VBEsat max. -IC = 20 mA; -IB = 2 mA D.C. current gain hFE min. -IC = 1 mA; -VCE = 10 V hFE min. -IC = 10 mA; -VCE = 10 V hFE min. -IC = 30 mA; -VCE = 10 V
300 300 0.25 - 5 0.1 6 0.5 0.9 25 40 25
200 V 200 V - A 0.25 A V 0.1 mA 8 pF
0.5 V 0.9 V
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax +q 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
Continental Device India Limited Data Sheet Page 3 of 3
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